PRECISION ETCHING OF ALUMINUM CONDUCTORS IN THE TECHNOLOGY OF SWITCHING DEVICES OF MICROSYSTEMS TECHNOLOGY

Experimentally obtained precision technology of forming a controlled profile of aluminum conductive paths with a specified resistance is presented. The technology is based on anisotropic plasma-chemical etching of aluminum in the gas mixture BCl - Cl with subsequent precision adjustment of path resistance by the “dry” plasma-chemical method. It is shown that in order to ensure the highest quality plasma chemical etching of aluminum with minimal under etching under the photoresist mask, with minimal inclination of the aluminum conductive path profile and absence of defectiveness of the etching pattern and stratified areas, it is necessary to use a multistage iterative technological process with technological operations of surface preparation before etching and operations of polymer and photoresist removal after etching.