Calculation of distributions of electron beam energy absorbed in PMMA and Si using various scattering models
This paper describes the simulation of electron beam scattering in polymethylmethacrylate (PMMA) and silicon (Si) using Monte Carlo method. The simulation used various scattering models, including both elastic and inelastic models, with and without secondary electron generation taken into account. For each material, three combinations of scattering models were tested in simulation. As a result, the distributions of absorbed energy and scattering events along the coordinate were obtained. The analysis of these results revealed the characteristic features of each scattering model.
Authors
- A. E. Rogozhin (ORCID: https://orcid.org/0000-0002-9554-673X)
Publication Details
- Journal
- Микроэлектроника / Russian Microelectronics
- Published
- 2025-01-01
- DOI
- https://doi.org/10.7868/s3034548025010027
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00