Calculation of distributions of electron beam energy absorbed in PMMA and Si using various scattering models

This paper describes the simulation of electron beam scattering in polymethylmethacrylate (PMMA) and silicon (Si) using Monte Carlo method. The simulation used various scattering models, including both elastic and inelastic models, with and without secondary electron generation taken into account. For each material, three combinations of scattering models were tested in simulation. As a result, the distributions of absorbed energy and scattering events along the coordinate were obtained. The analysis of these results revealed the characteristic features of each scattering model.

Authors

Publication Details

Journal
Микроэлектроника / Russian Microelectronics
Published
2025-01-01
DOI
https://doi.org/10.7868/s3034548025010027
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

Calculation of distributions of electron beam energy absorbed in PMMA and Si using various scattering models

A. E. Rogozhin
Микроэлектроника / Russian Microelectronics
GaN-based semiconductor devices and materials
article

Calculation of distributions of electron beam energy absorbed in PMMA and Si using various scattering models

A. E. Rogozhin
article en

Abstract

This paper describes the simulation of electron beam scattering in polymethylmethacrylate (PMMA) and silicon (Si) using Monte Carlo method. The simulation used various scattering models, including both elastic and inelastic models, with and without secondary electron generation taken into account. For each material, three combinations of scattering models were tested in simulation. As a result, the distributions of absorbed energy and scattering events along the coordinate were obtained. The analysis of these results revealed the characteristic features of each scattering model.

Микроэлектроника / Russian MicroelectronicsVol. 54(1)
Openalex Percentile: Top 83%
GaN-based semiconductor devices and materials
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