EFFECT OF BOUNDARY ROUGHNESS ON THE VARIABILITY OF THE I-V DATA OF SILICON FIELD-EFFECT GAA NANOTRANSISTORS

The influence of various sources of variability on transistor performance increases with the transition to three-dimensional architectures, and the roughness boundary of the transistor's working area is one of the main factors contributing to this increase. In this paper, the variability of the key parameters of silicon field-effect GAA nanotransistors with an unalloyed cylindrical working area with different working area lengths from 25 to 10 nm is investigated to demonstrate the effect of scaling. Fluctuations in the characteristics are analyzed for two values of correlation lengths of 10 nm and 20 nm and a range of RMS values of boundary deviations in the range from 0.4 to 0.85 nm. For the key parameters under study, threshold voltage, I and I currents, the standard deviation values for transistor structures with different channel lengths differ by about 2 times. At the same time, the patterns of variability of key parameters are functionally different. The consequence of this is that the methods for optimizing the effect of variability are not scalable due to the effect of boundary roughness.