FEATURES OF UPSETS FORMATION IN VLSI UNDER PULSED IONIZING RADIATION

The analysis of upset occurrence in very large-scale integrated circuits (VLSI) under the influence of pulsed ionizing radiation of various nature is carried out. Upsets in VLSI under gamma or electron pulses, first of all, are determined the effects of rail span collapse, due to volume ionization of semiconductor structures. The features of upsets occurrence due to the non-stationary latching and several possible competing effects are analyzed. Non-stationary surface radiation effects and fast annealing of radiation defects can lead, mainly, to temporary parametric failures, which depend on the dose rate. Single event effects under the influence of pulsed beams of neutrons, protons or ions are considered.