STABILIZATION OF MEMRISTOR CELL STATES DURING INITIAL SWITCHING PROCESS AFTER FORMING
A self-consistent model describing the break/restoration of a conducting channel-filament in a memristor cell based on the transport of oxygen vacancies in transition metal oxides is build. The stabilization of the memristor cell conductivity during initial switching from a low-resistance state to a high-resistance state and back is studied.
Authors
- А. В. Фадеев (ORCID: https://orcid.org/0009-0006-7674-207X)
Publication Details
- Journal
- Микроэлектроника / Russian Microelectronics
- Published
- 2025-01-01
- DOI
- https://doi.org/10.7868/s3034548025030044
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00