MULTILEVEL SWITCHINGS IN MEMRISTIVE STRUCTURES BASED ON OXIDIZED LEAD SELENIDE

Using oxidized lead selenide as the interface, Ag/PbSeO/PbSe heterostructures were made, demonstrating stable memristive characteristics. In order to obtain metastable multilevel states on such structures, studies have been performed using different protocols for delivering pulsed signals. By adjusting the number, amplitude, duration, and fill factor of the pulses, 13 metastable resistive states were implemented. The memristor under study showed good stability and reproducibility for several months.

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Publication Details

Journal
Микроэлектроника / Russian Microelectronics
Published
2025-01-01
DOI
https://doi.org/10.7868/s3034548025020037
Primary Topic
Advanced Memory and Neural Computing
Type
article
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article

MULTILEVEL SWITCHINGS IN MEMRISTIVE STRUCTURES BASED ON OXIDIZED LEAD SELENIDE

N. A. Tulina
Микроэлектроника / Russian Microelectronics
Advanced Memory and Neural Computing
article

MULTILEVEL SWITCHINGS IN MEMRISTIVE STRUCTURES BASED ON OXIDIZED LEAD SELENIDE

N. A. Tulina
article en

Abstract

Using oxidized lead selenide as the interface, Ag/PbSeO/PbSe heterostructures were made, demonstrating stable memristive characteristics. In order to obtain metastable multilevel states on such structures, studies have been performed using different protocols for delivering pulsed signals. By adjusting the number, amplitude, duration, and fill factor of the pulses, 13 metastable resistive states were implemented. The memristor under study showed good stability and reproducibility for several months.

Микроэлектроника / Russian MicroelectronicsVol. 54(2)
Openalex Percentile: Top 73%
Advanced Memory and Neural Computing
DOISourceOpenAlex
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MULTILEVEL SWITCHINGS IN MEMRISTIVE STRUCTURES BASED ON OXIDIZED LEAD SELENIDE — N. A. Tulina · Микроэлектроника / Russian Microelectronics (2025) | TGRS Research Map | TGRS