Constructing a visible-light-excited Z-scheme heterojunction by engineering the directional N–C/Cu insertion layer: overcoming work function mismatches

The construction of S-scheme heterojunctions is constrained by stringent work function (<i>Φ</i>) matching between oxidation and reduction photocatalysts, which limits material selection. Here, we present an innovative interfacial engineering strategy to overcome <i>Φ</i>-mismatched barriers by introducing a nitrogen-doped carbon (N-C) mediator and Cu nanoparticles at the WO<sub>3</sub>/Cu<sub>2</sub>O interface. Through a "post-deposition and pyrolysis" approach, we fabricated a tightly integrated Z-scheme WO<sub>3</sub>/N-C/Cu/Cu<sub>2</sub>O heterojunction, where the N-C layer and metallic Cu synergistically redirect photogenerated carrier recombination, preserving the high redox potentials of WO<sub>3</sub> (VB: +2.62 V) and Cu<sub>2</sub>O (CB: -1.41 V). Femtosecond transient absorption spectroscopy and electron paramagnetic resonance data revealed that interfacial electrons from WO<sub>3</sub> transferred to N-C and recombined with holes originating from Cu<sub>2</sub>O on Cu <i>via</i> the directional N-C/Cu insertion layer. The optimized heterojunction exhibits exceptional photocatalytic performance under blue light (450 nm), achieving a 99% yield in homo-coupling of terminal alkynes to 1,3-conjugated diynes and a hydrogen evolution rate 300-fold higher than that of conventional WO<sub>3</sub>/Cu<sub>2</sub>O. This work provides a universal paradigm for designing Z-scheme systems with mismatched components, unlocking new possibilities for solar energy conversion and organic synthesis.

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Publication Details

Journal
Chemical Science
Published
2025-01-01
DOI
https://doi.org/10.1039/d5sc05362e
Citations
2
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
1.46

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article

Constructing a visible-light-excited Z-scheme heterojunction by engineering the directional N–C/Cu insertion layer: overcoming work function mismatches

Liming Sun, Qiang Zhu, Shuting Zhi, Jinbu Li et al.
2 citations
Chemical Science
Semiconductor materials and devices
1.46
article

Constructing a visible-light-excited Z-scheme heterojunction by engineering the directional N–C/Cu insertion layer: overcoming work function mismatches

Liming Sun, Qiang Zhu, Shuting Zhi, Jinbu Li, Xiaoxiao He, Hao Gao, Xiguang Han, Wenwen Zhan, Lei Yang, Jianwei Zhao, Chengyu Qin
article en
2 citations

Abstract

The construction of S-scheme heterojunctions is constrained by stringent work function (<i>Φ</i>) matching between oxidation and reduction photocatalysts, which limits material selection. Here, we present an innovative interfacial engineering strategy to overcome <i>Φ</i>-mismatched barriers by introducing a nitrogen-doped carbon (N-C) mediator and Cu nanoparticles at the WO<sub>3</sub>/Cu<sub>2</sub>O interface. Through a "post-deposition and pyrolysis" approach, we fabricated a tightly integrated Z-scheme WO<sub>3</sub>/N-C/Cu/Cu<sub>2</sub>O heterojunction, where the N-C layer and metallic Cu synergistically redirect photogenerated carrier recombination, preserving the high redox potentials of WO<sub>3</sub> (VB: +2.62 V) and Cu<sub>2</sub>O (CB: -1.41 V). Femtosecond transient absorption spectroscopy and electron paramagnetic resonance data revealed that interfacial electrons from WO<sub>3</sub> transferred to N-C and recombined with holes originating from Cu<sub>2</sub>O on Cu <i>via</i> the directional N-C/Cu insertion layer. The optimized heterojunction exhibits exceptional photocatalytic performance under blue light (450 nm), achieving a 99% yield in homo-coupling of terminal alkynes to 1,3-conjugated diynes and a hydrogen evolution rate 300-fold higher than that of conventional WO<sub>3</sub>/Cu<sub>2</sub>O. This work provides a universal paradigm for designing Z-scheme systems with mismatched components, unlocking new possibilities for solar energy conversion and organic synthesis.

Chemical ScienceVol. 16(43)
Jiangsu Normal University (CN), Beacon Tech (Israel) (IL), East China Normal University (CN)
National Natural Science Foundation of China, East China Normal University
Openalex Percentile: Top 15%
Semiconductor materials and devices
1.46
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