Understanding hysteresis‐free reactive DC magnetron and high target utilization sputtering of TiZrHfVNbTa‐N coatings

Abstract Reactive direct current (DC) magnetron sputtering (rDCMS) and reactive high target utilization sputtering (rHiTUS) of compositionally complex TiZrHfVNbTa–N coatings were systematically investigated with varying nitrogen flow. The study combined experimental measurements of total and partial nitrogen pressures with simulations based on Berg's model. Both deposition systems exhibited hysteresis‐free behavior, characterized by two distinct nitrogen consumption regimes: (1) a nearly linear increase up to a critical nitrogen flow (≈4 sccm in rDCMS and ≈6 sccm in rHiTUS), and (2) a saturation regime. Simulations reproduced these trends and confirmed that hysteresis suppression originates from high pumping speeds (pumping speed/volume ratio > > 4 s −1 ). The applicability of Berg's model to rHiTUS was validated by the strong agreement between experiments and modeling, supporting the assumption that the fundamental processes of reactive sputtering—target sputtering, poisoning, and nitride formation—are identical in DCMS and HiTUS. The main technological benefit of operating in a hysteresis‐free regime is that coating composition and properties can be controlled solely through nitrogen flow adjustment.