Summary of the Electrical Properties of a MOS Device on Various Semiconductors

This is a review cum research communication in brief. A summary of the electrical properties of a metal-oxide-semiconductor (MOS) device on various semiconductors of Silicon, Silicon Carbide and Gallium Nitride is presented in the form of Table 1. The electrical properties for most of the devices in the summary have been published elsewhere and this brief mainly summarizes them so as to be able to compare the properties with one below the other in one view.

Authors

Publication Details

Journal
European journal of applied sciences
Published
2025-09-29
DOI
https://doi.org/10.14738/aivp.1305.19457
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
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article

Summary of the Electrical Properties of a MOS Device on Various Semiconductors

Ravi Kumar Chanana
European journal of applied sciences
Advancements in Semiconductor Devices and Circuit Design
article

Summary of the Electrical Properties of a MOS Device on Various Semiconductors

Ravi Kumar Chanana
article en

Abstract

This is a review cum research communication in brief. A summary of the electrical properties of a metal-oxide-semiconductor (MOS) device on various semiconductors of Silicon, Silicon Carbide and Gallium Nitride is presented in the form of Table 1. The electrical properties for most of the devices in the summary have been published elsewhere and this brief mainly summarizes them so as to be able to compare the properties with one below the other in one view.

European journal of applied sciencesVol. 13(05)
Openalex Percentile: Top 73%
Advancements in Semiconductor Devices and Circuit Design
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Summary of the Electrical Properties of a MOS Device on Various Semiconductors — Ravi Kumar Chanana · European journal of applied sciences (2025) | TGRS Research Map | TGRS