Transparent zinc oxide memristive crossbar structures fabrication for robotic machine vision systems

The paper demonstrates the possibility of creating a crossbar array on a glass substrate consisting of 16 ITO/ZnO/ITO memristor structures measuring 2×2 μm each for use in neuromorphic non-volatile resistive memory devices and machine vision systems. It was found that at a RF magnetron deposition power of 75 W for ZnO films, the memristor structures exhibit stable resistive switching of 20000 cycles between high-resistance (HRS = 34.82 ± 2.64 kOhm) and low-resistance (LRS = 13.81 ± 1.42 kOhm) states for all devices, while the resistance ratio in the HRS/LRS states is about 2.5. The obtained results can be used in developing technological processes for manufacturing optoelectronic memristor crossbar arrays for neuromorphic machine vision systems of robotic complexes.