High-temperature annealing of ZnO:Ga nanocrystalline films for memristive crossbar structures

The effect of high-temperature annealing on the parameters of ZnO:Ga thin films has been experimentally investigated. It was found that the change in the electrophysical parameters of ZnO:Ga films can also be associated with a change in the stoichiometric composition of the films as a result of the release of oxygen during annealing in a vacuum atmosphere with the subsequent formation of oxygen vacancies, which is confirmed by the results of XPS studies of ZnO:Ga films. Moreover, the influence of the geometrical parameters of the designed structure on the resistive switching of the memristive crossbar is theoretically investigated.