Co-design Framework for High Power, Medium/High Voltage WBG Power Modules: Case Study with 3.3 kV/200 A Wire-Bonded Low-Inductance SiC Half-Bridge Module

This paper proposed a co-design framework for high power high voltage wide bandgap (WBG) power module packaging that is generalized to reflect diverse design requirements across device technologies, packaging configurations, and voltage classes. Beyond the commonly addressed thermal, electrical, and mechanical multidisciplinary co-optimization, the proposed framework specially emphasizes considerations for medium/high voltage (MV/HV) designs, introduces the concept of Packaging and Assembly Process Development Kit (PA-PDK) and integrates “Design for Reliability (DfR)” in the development process for power module packaging. The effectiveness of the co-design framework is validated through case study with a 3.3 kV/200 A wire-bonded, low-inductance, silicon carbide (SiC) half-bridge module, which serves as a reference for the implementation of such co-design framework.

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Publication Details

Journal
IEEE Journal of Emerging and Selected Topics in Power Electronics
Published
2025-01-01
DOI
https://doi.org/10.1109/jestpe.2025.3616261
Citations
2
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
1.46
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article

Co-design Framework for High Power, Medium/High Voltage WBG Power Modules: Case Study with 3.3 kV/200 A Wire-Bonded Low-Inductance SiC Half-Bridge Module

Abdul Basit Mirza, Mustafeez Ul Hassan, Jack Flicker, Yang Li et al.
2 citations
IEEE Journal of Emerging and Selected Topics in Power Electronics
Silicon Carbide Semiconductor Technologies
1.46
article

Co-design Framework for High Power, Medium/High Voltage WBG Power Modules: Case Study with 3.3 kV/200 A Wire-Bonded Low-Inductance SiC Half-Bridge Module

Abdul Basit Mirza, Mustafeez Ul Hassan, Jack Flicker, Yang Li, Shiyue Deng, Fang Luo, Amol Deshpande, Deepi Singh, Yang Xie, Yuxuan Wu
article en
2 citations

Abstract

This paper proposed a co-design framework for high power high voltage wide bandgap (WBG) power module packaging that is generalized to reflect diverse design requirements across device technologies, packaging configurations, and voltage classes. Beyond the commonly addressed thermal, electrical, and mechanical multidisciplinary co-optimization, the proposed framework specially emphasizes considerations for medium/high voltage (MV/HV) designs, introduces the concept of Packaging and Assembly Process Development Kit (PA-PDK) and integrates “Design for Reliability (DfR)” in the development process for power module packaging. The effectiveness of the co-design framework is validated through case study with a 3.3 kV/200 A wire-bonded, low-inductance, silicon carbide (SiC) half-bridge module, which serves as a reference for the implementation of such co-design framework.

IEEE Journal of Emerging and Selected Topics in Power Electronics
Sandia National Laboratories (US), Stony Brook University (US), University of Arkansas at Fayetteville (US)
Openalex Percentile: Top 15%
Silicon Carbide Semiconductor Technologies
1.46
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Co-design Framework for High Power, Medium/High Voltage WBG Power Modules: Case Study with 3.3 kV/200 A Wire-Bonded Low-Inductance SiC Half-Bridge Module — Abdul Basit Mirza, Mustafeez Ul Hassan, et al. · IEEE Journal of Emerging and Selected Topics in Power Electronics (2025) | TGRS Research Map | TGRS