Co-design Framework for High Power, Medium/High Voltage WBG Power Modules: Case Study with 3.3 kV/200 A Wire-Bonded Low-Inductance SiC Half-Bridge Module
This paper proposed a co-design framework for high power high voltage wide bandgap (WBG) power module packaging that is generalized to reflect diverse design requirements across device technologies, packaging configurations, and voltage classes. Beyond the commonly addressed thermal, electrical, and mechanical multidisciplinary co-optimization, the proposed framework specially emphasizes considerations for medium/high voltage (MV/HV) designs, introduces the concept of Packaging and Assembly Process Development Kit (PA-PDK) and integrates “Design for Reliability (DfR)” in the development process for power module packaging. The effectiveness of the co-design framework is validated through case study with a 3.3 kV/200 A wire-bonded, low-inductance, silicon carbide (SiC) half-bridge module, which serves as a reference for the implementation of such co-design framework.
Authors
- Abdul Basit Mirza (ORCID: https://orcid.org/0000-0003-4781-9657)
- Mustafeez Ul Hassan (ORCID: https://orcid.org/0000-0003-2604-416X)
- Jack Flicker (ORCID: https://orcid.org/0000-0002-1223-2154)
- Yang Li (ORCID: https://orcid.org/0009-0000-6669-7195)
- Shiyue Deng
- Fang Luo
- Amol Deshpande (ORCID: https://orcid.org/0000-0002-1199-101X)
- Deepi Singh (ORCID: https://orcid.org/0009-0004-0703-1368)
- Yang Xie
- Yuxuan Wu (ORCID: https://orcid.org/0009-0001-1644-2714)
Institutions
- Sandia National Laboratories (US)
- Stony Brook University (US)
- University of Arkansas at Fayetteville (US)
Publication Details
- Journal
- IEEE Journal of Emerging and Selected Topics in Power Electronics
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1109/jestpe.2025.3616261
- Citations
- 2
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 1.46