Decoding glamorous piezoelectricity and pyroelectricity of truncated tapered GaN nanowires: a bond relaxation insight
Abstract From the notion of atomic bond relaxation, an analytical correlation for position-, size-, and shape-dependent piezoelectric/pyroelectric potential of truncated tapered GaN nanowires is developed. Quantitative analyses have uncovered that surface broken bond-motivated atomic coordination number lowering, bond shortening and hardening, and surface-to-volume ratio rising are common physical origins of position, size, and shape effects of piezoelectric/pyroelectric potential. The position, size, and shape dependencies of piezoelectric potential are equal to those of pyroelectric potential. Concretely, the piezoelectric/pyroelectric potential ratio shows marked strengthening with the change in position from bottom to top of truncated tapered nanowires, while those of traditional columnar nanowires are independent of position. Piezoelectric/pyroelectric potential is bottom radius- and half cone angle-dependent, which rises with decreasing bottom radius in a hyperbolic form and rises with increasing half cone angle in a slightly nonlinear way. The truncated tapered nanowires can produce much higher piezoelectric/pyroelectric potential than their columnar nanowire counterparts owing to their larger surface-to-volume ratio. At the same equivalent bottom radius, with the decrease in the number of sides for truncated tapered polygonal nanowires, the surface-to-volume ratio rises, and the piezoelectric/pyroelectric potential heightens. The present formulation goes beyond the range of existing methods, which not only unveils quantitative information but also displays a penetrative perception of mechanisms for piezoelectric/pyroelectric potential in response to position, size, and shape.
Authors
- Liwen Yang (ORCID: https://orcid.org/0000-0003-1001-4601)
- Min Zhu (ORCID: https://orcid.org/0000-0003-0999-7559)
- Jin Liu (ORCID: https://orcid.org/0000-0002-1694-0334)
- Xuexian Yang (ORCID: https://orcid.org/0000-0002-5900-1206)
- Jianwen Ding (ORCID: https://orcid.org/0000-0001-6630-7265)
Institutions
- Jishou University (CN)
- Xiangtan University (CN)
Publication Details
- Journal
- Journal of Physics D Applied Physics
- Published
- 2025-09-30
- DOI
- https://doi.org/10.1088/1361-6463/ae0d9b
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00