Performance modeling of CsPbX ₃ (X=Br,I) solar cells with PCBM as hole transport material

Abstract Hole transport layer (HTL)-free perovskite solar cells (PSCs) face significant challenges related to charge extraction and recombination at the perovskite/electrode interface. In this study, we numerically investigate the use of (6,6)-Phenyl C 61 -butyric acid methyl ester (PCBM) as a hole transport layer between the perovskite and carbon electrode in an HTL-free configuration. Using SCAPS-1D simulations, we modeled the device with CsPbBr 3 as the absorber layer, tin dioxide (SnO 2 ) as the electron transport layer (ETL), and indium tin oxide (ITO) as the transparent conductive oxide (TCO). The simulation achieved a power conversion efficiency (PCE) of 11.08%, which was validated by comparing the modeled device’s performance with experimentally fabricated CsPbBr 3 -based PSCs reported in the literature. Furthermore, to enhance performance, CsPbBr 3 was replaced with CsPbI 3 , resulting in a significant increase in PCE to 17.03%. Our results underscore the effectiveness of PCBM in PSCs, providing a promising approach to enhance charge transport and boost device efficiency.