A multi-fin normally-off <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> vertical transistor with a breakdown voltage exceeding 10 kV
Abstract We demonstrated a multi-fin normally-off β -Ga 2 O 3 vertical transistor with a breakdown voltage exceeding 10 kV, a specific on-resistance of 289 mΩ·cm 2 , and a power figure-of-merit of 0.35 GW cm −2 . The vertical transistor was fabricated on a low-donor-concentration ( N d − N a ≈ 1.8 × 10 15 cm −3 ) and thick (thickness ≈ 85 μ m) epitaxial layer grown on a (011) β -Ga 2 O 3 substrate by halide vapor phase epitaxy to enhance the breakdown voltage. The breakdown voltage exceeding 10 kV is the highest reported for β -Ga 2 O 3 vertical transistors. This result indicates the great potential of Ga 2 O 3 vertical power devices.
Authors
- Yuki Ueda (ORCID: https://orcid.org/0000-0001-8405-6180)
- Chia-Hung Lin (ORCID: https://orcid.org/0000-0002-0049-1319)
- Akito Kuramata (ORCID: https://orcid.org/0000-0002-9583-6120)
- Kentaro Ema
- Kohei Sasaki (ORCID: https://orcid.org/0000-0002-8923-7703)
- Daiki Wakimoto
- Hironobu Miyamoto
Institutions
- Crystal Research (United States) (US)
- Novel (United States) (US)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2025-09-29
- DOI
- https://doi.org/10.35848/1882-0786/ae0d2a
- Citations
- 6
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 2.56