Molecular Dynamics Simulations Guide Solvent Etching for the Preparation of High-Performance Spherical DAP-4

As the first metal-free molecular perovskite energetic material, (H<sub>2</sub>dabco)[NH<sub>4</sub>(ClO<sub>4</sub>)<sub>3</sub>]DAP-4 has attracted significant research interest globally for its excellent thermal stability, superior detonation performance, and good moisture resistance. The crystal form of energetic materials plays a crucial role in determining the energy output and safety performance. To obtain spherical DAP-4 crystal particles, the effect of different solvents on the growth morphology of DAP-4 was studied. Based on the simulation and experimental results, a suitable mixed solvent system was selected, and spherical DAP-4 was successfully prepared by the solvent-etching method. The influence of process parameters on the morphology and particle size of DAP-4 crystals was studied. The morphology and particle size distribution of DAP-4 crystals were characterized, and the thermal decomposition behavior, combustion properties, and mechanical sensitivity of spherical DAP-4 were examined and discussed. The results show that spherical DAP-4 can be obtained under conditions of a solvent/nonsolvent volume ratio of 1:2, a temperature of 40 °C, and an experimental duration of 3 h. Compared to raw DAP-4, the bulk density and tapped density of spherical DAP-4 increased by 35.1% and 11.0%, respectively. The thermal decomposition peak temperature of spherical DAP-4 is close to that of raw DAP-4, indicating that spheroidization did not reduce the thermal stability of DAP-4. The combustion performance of spherical DAP-4 was significantly improved. In addition, the impact sensitivity of spherical DAP-4 increased by 23.17%, and the probability of explosion decreased by 12% compared to raw DAP-4. Based on these findings, a sensitivity-reducing mechanism for spherical DAP-4 was proposed.

Authors

Institutions

Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-09-29
DOI
https://doi.org/10.1021/acsami.5c10622
Citations
2
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
1.46
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Molecular Dynamics Simulations Guide Solvent Etching for the Preparation of High-Performance Spherical DAP-4

Jun Di, Yong Kou, Guigao Liu, Zhongwu Chen et al.
2 citations
ACS Applied Materials & Interfaces
Semiconductor materials and devices
1.46
article

Molecular Dynamics Simulations Guide Solvent Etching for the Preparation of High-Performance Spherical DAP-4

Jun Di, Yong Kou, Guigao Liu, Zhongwu Chen, Lei Xiao, Hongyu Yang, Yiwen Hu, Dongqi Liu, Fengqi Zhao, Gazi Hao, Hongbing Lei
article en
2 citations

Abstract

As the first metal-free molecular perovskite energetic material, (H<sub>2</sub>dabco)[NH<sub>4</sub>(ClO<sub>4</sub>)<sub>3</sub>]DAP-4 has attracted significant research interest globally for its excellent thermal stability, superior detonation performance, and good moisture resistance. The crystal form of energetic materials plays a crucial role in determining the energy output and safety performance. To obtain spherical DAP-4 crystal particles, the effect of different solvents on the growth morphology of DAP-4 was studied. Based on the simulation and experimental results, a suitable mixed solvent system was selected, and spherical DAP-4 was successfully prepared by the solvent-etching method. The influence of process parameters on the morphology and particle size of DAP-4 crystals was studied. The morphology and particle size distribution of DAP-4 crystals were characterized, and the thermal decomposition behavior, combustion properties, and mechanical sensitivity of spherical DAP-4 were examined and discussed. The results show that spherical DAP-4 can be obtained under conditions of a solvent/nonsolvent volume ratio of 1:2, a temperature of 40 °C, and an experimental duration of 3 h. Compared to raw DAP-4, the bulk density and tapped density of spherical DAP-4 increased by 35.1% and 11.0%, respectively. The thermal decomposition peak temperature of spherical DAP-4 is close to that of raw DAP-4, indicating that spheroidization did not reduce the thermal stability of DAP-4. The combustion performance of spherical DAP-4 was significantly improved. In addition, the impact sensitivity of spherical DAP-4 increased by 23.17%, and the probability of explosion decreased by 12% compared to raw DAP-4. Based on these findings, a sensitivity-reducing mechanism for spherical DAP-4 was proposed.

ACS Applied Materials & InterfacesVol. 17(40)
Nanjing University of Science and Technology (CN), Shanxi Provincial Institute of Chemical Industry (China) (CN)
Openalex Percentile: Top 15%
Semiconductor materials and devices
1.46
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.