Solution‐Processed Bi ₂ S ₃ Nanostructures for Flexible Memory and Neuromorphic Computing

Abstract The rapid advancement of wearable computing and edge AI technologies is driving the need for low‐temperature, flexible, and neuromorphic‐compatible electronic materials. In this work, the successful low‐temperature deposition of Bi 2 S 3 thin films via an in situ solvothermal method using the single‐source precursor (SSP) [Bi(S 2 P(OC 3 H₇) 2 ) 3 ] is reported. This solution‐processed approach enables the formation of high‐quality, crystalline, and stoichiometric Bi 2 S 3 films over a broad temperature window (140–200 °C), compatible with a range of substrates including silicon, polyimide, and PET. Leveraging this deposition technique, Bi 2 S 3 ‐based memristors are fabricated on both rigid and flexible substrates. The devices exhibit stable resistive switching behavior and demonstrate mechanical and electrical robustness under stress conditions. Furthermore, the memristors effectively emulate long‐term synaptic plasticity, achieving high learning accuracy. These findings establish SSP‐derived Bi 2 S 3 films as a promising material platform for next‐generation flexible neuromorphic computing and memory technologies.