PREDICTING DATA LEAK RISK FROM SMARTPHONE DEPENDENCY, DIGITAL MEMORY AND USAGE PATTERNS
Smartphone is no longer limited to communication purposes but has evolved into a digital tool for managing work, learning, and daily social activities. This influence has implications for smartphone dependency and the formation of digital memory. However, heavy dependency, reliance on digital memory, and unsafe usage habits increase the risk of data leaks. Despite rising concerns over data privacy, many users especially young adults continue to underestimate how their smartphone dependence, digital memory practices, and usage pattern contribute to potential data leakages. Therefore, this study examines the relationship between smartphone dependency, digital memory, usage patterns and data leak risk among young adults in Malaysia. Using Partial Least Squares Structural Equation Modelling (PLS-SEM) on 353 valid responses, the findings reveal significant positive relationships between smartphone dependency (β = 0.449), digital memory (β = 0.245), and usage patterns (β = 0.235) with data leak risks, explaining 78.5% of the variance. These findings indicate that excessive smartphone dependency, increasing reliance on digital memory, and risky usage behaviors significantly contribute to users' digital vulnerability. This highlights the urgent need for digital literacy to reduce the risk of personal data leaks aimed at building a more informed and digitally responsible society.
Authors
- Mohd Nur Najmi Nuji (ORCID: https://orcid.org/0000-0002-4624-8322)
- Mohd Hanafi Azman Ong (ORCID: https://orcid.org/0000-0001-7964-7429)
- Asad Ali (ORCID: https://orcid.org/0000-0001-9784-3378)
- MOHD AZUL MOHAMAD SALLEH
Institutions
- Universiti Teknologi MARA (MY)
- National University of Malaysia (MY)
Publication Details
- Journal
- Quantum Journal of Social Sciences and Humanities
- Published
- 2025-08-31
- DOI
- https://doi.org/10.55197/qjssh.v6i4.803
- Primary Topic
- User Authentication and Security Systems
- Type
- article
- Field-Weighted Citation Impact
- 0.00