Fabrication of Planar Highly Enriched Silicon by ²⁸ Si Focused Ion Beam and Subsequent Experimental Optimization

Abstract This work presents an in‐depth study of the role of experimental parameters in the localized 28 Si enrichment, via the depletion of 29 Si and 30 Si, of Si wafers using a focused ion beam. Ion implantation‐induced surface recession and swelling are investigated, with the energy at which these are balanced being 37 keV. The maximum level of enrichment and its depth profile are found to vary with the 28 Si ion energy and ionization state, as well as the ion beam current density. Together, this enables the complex interplay of ion‐induced processes that govern the enrichment to be understood more clearly and optimized. Furthermore, how modification of dynamic Monte Carlo simulations (TRYDIN) is able to demonstrate, through changing the Si surface binding energy, enables accurate reproduction of the experimentally observed results.