Preparation and Performance Exploration of MoS2/WSe2 Van Der Waals Heterojunction Tunneling Field-Effect Transistor
Due to their high carrier mobility, thermal conductivity, and exceptional foldability, transition metal dichalcogenides (TMDs) present promising prospects in the realm of flexible semiconductor devices. Concurrently, tunneling field-effect transistors (TFETs) have garnered significant attention owing to their low energy consumption. This study investigates a TMD van der Waals heterojunction (VdWH) TFET, specifically by fabricating MoS<sub>2</sub> field-effect transistors (FETs), WSe<sub>2</sub> FETs, and MoS<sub>2</sub>/WSe<sub>2</sub> VdWH TFETs. The N-type characteristics of the MoS<sub>2</sub> and P-type characteristics of WSe<sub>2</sub> are established through an analysis of the electrical characteristics of the respective FETs. Finally, we analyze the energy band and electrical characteristics of the MoS<sub>2</sub>/WSe<sub>2</sub> VdWH TFET, which exhibits a drain current switching ratio of 10<sup>5</sup>. This study provides valuable insights for the development of novel low-power devices.
Authors
- Cong Yan (ORCID: https://orcid.org/0000-0003-4680-9094)
- Shulong Wang (ORCID: https://orcid.org/0000-0002-8560-2478)
- Hongxia Liu (ORCID: https://orcid.org/0000-0003-4547-0666)
- Chen Chong (ORCID: https://orcid.org/0000-0003-2092-3614)
- Shupeng Chen (ORCID: https://orcid.org/0000-0002-6220-7061)
Institutions
- Xidian University (CN)
Publication Details
- Journal
- Micromachines
- Published
- 2025-09-29
- DOI
- https://doi.org/10.3390/mi16101108
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00