High Remnant Polarization (2P _r > 65 μ C/cm ² ) in Sputtered Hf _x Zr _{1- x} O _y Thin Films

In this letter, we are reporting the effect of Zr concentration on the remnant polarization (P<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</sub>) of co-sputtered HfO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>:ZrO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) thin films with the highest 2P<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</sub> of ~66 μC/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> on Silicon substrate and Tungsten (W) as a top electrode for the first time. The x-ray diffraction confirms the increment in monoclinic (m) phase and crystallite size with increasing Zr content which modulates the P<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</sub>. The x-ray photoelectron spectroscopy confirms the chemical composition of the films. Our results show the highest 2P<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</sub> >51 μC/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> over a wide range of Zr concentration (6%-43%) and akin to the previously reported 2P<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</sub> of atomic layer deposited (ALD) HZO films. The study opens pathways to engineer the sputtered HZO films with high-volume manufacturing and high P<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</sub> for non-volatile memory applications.