Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18 pA/√Hz TIA in 22-nm FDSOI
We present a Monolithically Integrated (MI) dualjunction monitoring photodiode (PD) and transimpedance amplifier (TIA). The photocurrent originates from the Deep NWell (DNW)/P-type substrate (PSUB) (< 5 GHz) and the P-Well (PW)/DNW (> 1 GHz) junctions. The presented combination of bulk PD and 22nm Fully-Depleted Silicon-On-Insulator (FDSOI) TIA (18GHz bandwidth, 17.8pA/√Hz noise level) advances the state-of-the-art in MI high-speed optical monitoring and reduces the inherent trade-off in MI solutions regarding PD (responsivity & bandwidth) and RF circuitry (ft) performance.
Authors
- Paul R. Klatser (ORCID: https://orcid.org/0000-0003-2127-9138)
- Bram Nauta (ORCID: https://orcid.org/0000-0001-6790-5873)
- Nimit Jain (ORCID: https://orcid.org/0009-0009-7367-1781)
- Mark S. Oude Alink (ORCID: https://orcid.org/0000-0001-7040-333X)
- Jelle H. T. Bakker (ORCID: https://orcid.org/0000-0003-4249-1883)
Institutions
- University of Twente (NL)
Publication Details
- Journal
- IEEE Solid-State Circuits Letters
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1109/lssc.2025.3615656
- Primary Topic
- Advanced Optical Sensing Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00