Cryogenic in situ fabrication of reversible direct write logic circuits and devices

Signal transmission across cryogenic and room-temperature environments remains a significant bottleneck in superconducting quantum computing and classical circuit integration. Furthermore, interactions among cryogenic devices often require room-temperature interfacing, driving substantial demand for data read/write interfaces, which in turn increases interconnect complexity and constrains scalability. In situ fabrication of cryogenic, high-performance logic circuits and devices presents a promising solution to address this "wiring bottleneck". Here, we demonstrated interfacial two-dimensional electron gas devices with reversible interface states that can be directly modulated at operating temperatures while achieving an unprecedented ultrahigh on/off ratio. Remarkably, these devices can be patterned using a "light pencil" and erased with a pulsed electric field, enabling resist free, in situ direct writing and electrical erasure of the interface state.

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Publication Details

Journal
Nature Communications
Published
2025-09-29
DOI
https://doi.org/10.1038/s41467-025-63647-0
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Cryogenic in situ fabrication of reversible direct write logic circuits and devices

Lin Li, Yuhao Hong, Zhaoliang Liao, Tongrui Li et al.
Nature Communications
Semiconductor materials and devices
article

Cryogenic in situ fabrication of reversible direct write logic circuits and devices

Lin Li, Yuhao Hong, Zhaoliang Liao, Tongrui Li, Lei Wang, Gertjan Koster, Guus Rijnders, Mark Huijben, Yulin Gan, Wen Xiao, Kai Chen, Junhua Liu, Shilin Hu, Long Wei, Ziyue Shen
article en

Abstract

Signal transmission across cryogenic and room-temperature environments remains a significant bottleneck in superconducting quantum computing and classical circuit integration. Furthermore, interactions among cryogenic devices often require room-temperature interfacing, driving substantial demand for data read/write interfaces, which in turn increases interconnect complexity and constrains scalability. In situ fabrication of cryogenic, high-performance logic circuits and devices presents a promising solution to address this "wiring bottleneck". Here, we demonstrated interfacial two-dimensional electron gas devices with reversible interface states that can be directly modulated at operating temperatures while achieving an unprecedented ultrahigh on/off ratio. Remarkably, these devices can be patterned using a "light pencil" and erased with a pulsed electric field, enabling resist free, in situ direct writing and electrical erasure of the interface state.

Nature CommunicationsVol. 16(1)
University of Science and Technology of China (CN), National Synchrotron Radiation Laboratory (CN), University of Twente (NL)
National Natural Science Foundation of China, University of Science and Technology of China
Openalex Percentile: Top 74%
Semiconductor materials and devices
DOIOpen Access PDFOpenAlex
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