A universal method for in situ control of stoichiometry and termination of epitaxial perovskite films

The perovskite ABO<sub>3</sub> structure serves as the foundation for diverse functional and quantum materials, yet its applications are hindered by challenges in control of film stoichiometry and the precise construction of interfaces, particularly compared to conventional semiconductors. While a layer-by-layer growth mode is frequently cited, we demonstrate that many transition-metal perovskite oxides self-assemble via an energetically favorable layer-inversion mechanism. This phenomenon can be strategically exploited to fine-tune stoichiometry and surface termination at any point during growth. Layer inversion produces consistent behavior in electron diffraction rocking curves and diffracted-beam intensity oscillations during alternating A- and B-site shuttered growth across various polar and nonpolar surfaces. We introduce a model that accurately interprets these oscillations, enabling an entirely in situ method for precise relative and absolute calibration of multielemental A- and B-site fluxes at the percent level. This approach is successfully applied to the growth of a single-phase high-entropy oxide film.

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Publication Details

Journal
Nature Communications
Published
2025-09-29
DOI
https://doi.org/10.1038/s41467-025-63608-7
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
Field-Weighted Citation Impact
0.00

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article

A universal method for in situ control of stoichiometry and termination of epitaxial perovskite films

Xiaoxing Xi, Fengmiao Li, Peter A. van Aken, E. Benckiser et al.
Nature Communications
Electronic and Structural Properties of Oxides
article

A universal method for in situ control of stoichiometry and termination of epitaxial perovskite films

Xiaoxing Xi, Fengmiao Li, Peter A. van Aken, E. Benckiser, Г. Логвенов, Hyungki Shin, Piero Torelli, Rebecca Pons, Ke Zou, Y. Eren Suyolcu, Gideok Kim, Pietro Parisse, B. A. Davidson, Chong Liu, A. Yu. Petrov, Pablo Sosa-Lizama, Georg Cristiani
article en

Abstract

The perovskite ABO<sub>3</sub> structure serves as the foundation for diverse functional and quantum materials, yet its applications are hindered by challenges in control of film stoichiometry and the precise construction of interfaces, particularly compared to conventional semiconductors. While a layer-by-layer growth mode is frequently cited, we demonstrate that many transition-metal perovskite oxides self-assemble via an energetically favorable layer-inversion mechanism. This phenomenon can be strategically exploited to fine-tune stoichiometry and surface termination at any point during growth. Layer inversion produces consistent behavior in electron diffraction rocking curves and diffracted-beam intensity oscillations during alternating A- and B-site shuttered growth across various polar and nonpolar surfaces. We introduce a model that accurately interprets these oscillations, enabling an entirely in situ method for precise relative and absolute calibration of multielemental A- and B-site fluxes at the percent level. This approach is successfully applied to the growth of a single-phase high-entropy oxide film.

Nature CommunicationsVol. 16(1)
University of British Columbia (CA), Max Planck Institute for Solid State Research (DE), Istituto Officina dei Materiali (IT), Temple University (US)
Gordon and Betty Moore Foundation, Temple University, University of Tokyo, Canada First Research Excellence Fund, Natural Sciences and Engineering Research Council of Canada
Openalex Percentile: Top 79%
Electronic and Structural Properties of Oxides
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