Output performance of Bi-Sb-Te based thermoelectric-transistor model on parallel temperature gradient

A novel thermoelectricity-amplified transistor model based on thermoelectric (TE) materials is proposed, which synergistically integrating the Seebeck effect and bipolar junction transistor operation. The design leverages temperature gradient-induced carrier transport in a Bi-Sb-Te PNP heterojunction in lateral configuration under unidirectional thermal excitation. By combining voltage generation from the Seebeck effect (ΔT-driven) with the inherent current amplification of transistors, this self-powered device demonstrates enhanced energy conversion capabilities without requiring external bias. Numerical simulations demonstrated that under a 50 K thermal gradient, the optimized single device configuration achieves 102.14 µW output power (P_out) with 1.04% energy conversion efficiency (η), showcasing its viability for low-grade heat recovery applications.