The effect of non-stoichiometry in Sb2Se3 films on their phonon and electronic properties in the infrared range

Due to the noticeable part of Sb<sub>2</sub>Se<sub>3</sub> films in solar cell technology, the deposition of Sb<sub>2</sub>Se<sub>3</sub> films with the desirable content and improved crystalline perfection is of crucial importance. Therefore, extensive experimental and theoretical studies of the electronic and phonon properties of these materials are of interest. In this work, the stoichiometry and morphology of antimony selenide films are correlated to their optical properties in the far-infrared regime and compared to theoretically calculated properties for an ideal crystal. For this study, the reflectance of a series of 1.4-1.7 μm thick Sb<sub>x</sub>Se<sub>y</sub> layers, produced on soda-lime glass substrates by molecular beam chemical deposition, was measured in the spectral range of 25-5000 cm⁻¹ using an FT-IR spectrometer and synchrotron radiation. The near-surface and bulk crystallographic structure and phase composition were previously determined using grazing incidence X-ray diffraction (GIXRD) under varying incident angles. The chemical composition and morphology were investigated using scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). It was shown that the spectral positions of numerous maxima of the reflectance of Sb<sub>x</sub>Se<sub>y</sub> layers for various x/y indices in the phonon excitation range of 25-230 cm⁻¹ are consistent with the positions of the maxima of the imaginary part of the dielectric function of Sb<sub>2</sub>Se<sub>3</sub> crystals, calculated within the framework of density functional theory. A significant increase in the reflectance values was observed for Sb<sub>x</sub>Se<sub>y</sub> layers containing the largest relative amount of antimony x/y, which may be due to the increased content of the metallic form of antimony compared to the amount of the pure Sb<sub>2</sub>Se<sub>3</sub> semiconducting phase. A correlation was found between the technological parameters of production (temperature) and the final chemical composition and morphology of the Sb<sub>x</sub>Se<sub>y</sub> layers. To explain the observed relationships, calculations of the cohesive energy of Sb<sub>2</sub>Se<sub>3</sub> and Sb crystals and the binding energy of the residual antimony atom inside and on the surface of the antimony selenide supercell were performed. The main conclusions of the theoretical calculations are consistent with the results of EDX and XRD measurements of the Sb<sub>x</sub>Se<sub>y</sub> layers.

Authors

Institutions

Publication Details

Journal
Scientific Reports
Published
2025-09-29
DOI
https://doi.org/10.1038/s41598-025-17551-8
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

The effect of non-stoichiometry in Sb2Se3 films on their phonon and electronic properties in the infrared range

Florian Ruske, Alexander Veber, K.M. Kouchkarov, M. Pirimmatov et al.
Scientific Reports
Chalcogenide Semiconductor Thin Films
article

The effect of non-stoichiometry in Sb2Se3 films on their phonon and electronic properties in the infrared range

Florian Ruske, Alexander Veber, K.M. Kouchkarov, M. Pirimmatov, D. Z. Isakov, Leszek Bychto, Р. Хуррамов, A. Patryn, Andrii I. Kashuba, Alexander Steigert, B. A. Ergashev, René Schwiddessen, T.M. Razykov, M. Piasecki, U. Schade, B. Andriyevsky, Ljiljana Puškar
article en

Abstract

Due to the noticeable part of Sb<sub>2</sub>Se<sub>3</sub> films in solar cell technology, the deposition of Sb<sub>2</sub>Se<sub>3</sub> films with the desirable content and improved crystalline perfection is of crucial importance. Therefore, extensive experimental and theoretical studies of the electronic and phonon properties of these materials are of interest. In this work, the stoichiometry and morphology of antimony selenide films are correlated to their optical properties in the far-infrared regime and compared to theoretically calculated properties for an ideal crystal. For this study, the reflectance of a series of 1.4-1.7 μm thick Sb<sub>x</sub>Se<sub>y</sub> layers, produced on soda-lime glass substrates by molecular beam chemical deposition, was measured in the spectral range of 25-5000 cm⁻¹ using an FT-IR spectrometer and synchrotron radiation. The near-surface and bulk crystallographic structure and phase composition were previously determined using grazing incidence X-ray diffraction (GIXRD) under varying incident angles. The chemical composition and morphology were investigated using scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). It was shown that the spectral positions of numerous maxima of the reflectance of Sb<sub>x</sub>Se<sub>y</sub> layers for various x/y indices in the phonon excitation range of 25-230 cm⁻¹ are consistent with the positions of the maxima of the imaginary part of the dielectric function of Sb<sub>2</sub>Se<sub>3</sub> crystals, calculated within the framework of density functional theory. A significant increase in the reflectance values was observed for Sb<sub>x</sub>Se<sub>y</sub> layers containing the largest relative amount of antimony x/y, which may be due to the increased content of the metallic form of antimony compared to the amount of the pure Sb<sub>2</sub>Se<sub>3</sub> semiconducting phase. A correlation was found between the technological parameters of production (temperature) and the final chemical composition and morphology of the Sb<sub>x</sub>Se<sub>y</sub> layers. To explain the observed relationships, calculations of the cohesive energy of Sb<sub>2</sub>Se<sub>3</sub> and Sb crystals and the binding energy of the residual antimony atom inside and on the surface of the antimony selenide supercell were performed. The main conclusions of the theoretical calculations are consistent with the results of EDX and XRD measurements of the Sb<sub>x</sub>Se<sub>y</sub> layers.

Scientific ReportsVol. 15(1)
Jan Długosz University (PL), Academy of Sciences Republic of Uzbekistan (UZ), Częstochowa University of Technology (PL), Koszalin University of Technology (PL), Helmholtz-Zentrum Berlin für Materialien und Energie (DE), Humboldt-Universität zu Berlin (DE), Lviv Polytechnic National University (UA)
Academy of Sciences Republic of Uzbekistan, Helmholtz-Zentrum Berlin für Materialien und Energie, Wroclawskie Centrum Sieciowo-Superkomputerowe, Politechnika Wroclawska
Openalex Percentile: Top 74%
Chalcogenide Semiconductor Thin Films
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.