INL impact of parasitic capacitance in auto-zero integrators in incremental sigma-delta ADCs

Integral nonlinearity (INL) is a key parameter of high-precision incremental sigma-delta analog-to-digital converters (ADCs). Spikes in measured INL plots have been encountered at specific points from reported studies, which however, are often ignored. Here, we report that the parasitic capacitance introduced by the reset switch in the auto-zero integrator in incremental ADC leads to output errors and visible spikes in the INL plot. We demonstrate the impact of this phenomenon through simulations and propose a compensation method by introducing symmetrical parasitic capacitance to counteract its effects. The design and improvement are further experimentally verified based on 0.25-μm CMOS process. An extended counting ADC based on incremental ADC with the parasitic capacitance demonstrates an INL of -4.13/+3.27 LSB, while the ADC with added symmetrical parasitic capacitance exhibits smaller spikes and lower INL of -2.14/+2.52 LSB.

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Publication Details

Journal
IEICE Electronics Express
Published
2025-09-29
DOI
https://doi.org/10.1587/elex.22.20250505
Citations
1
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.73

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article

INL impact of parasitic capacitance in auto-zero integrators in incremental sigma-delta ADCs

Yiqun Shi, Benpeng Xun, Yunpeng Li, Qingqing Sun et al.
1 citations
IEICE Electronics Express
Semiconductor materials and devices
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article

INL impact of parasitic capacitance in auto-zero integrators in incremental sigma-delta ADCs

Yiqun Shi, Benpeng Xun, Yunpeng Li, Qingqing Sun, Meng Li, Hao Zhu, Xin Xu
article en
1 citations

Abstract

Integral nonlinearity (INL) is a key parameter of high-precision incremental sigma-delta analog-to-digital converters (ADCs). Spikes in measured INL plots have been encountered at specific points from reported studies, which however, are often ignored. Here, we report that the parasitic capacitance introduced by the reset switch in the auto-zero integrator in incremental ADC leads to output errors and visible spikes in the INL plot. We demonstrate the impact of this phenomenon through simulations and propose a compensation method by introducing symmetrical parasitic capacitance to counteract its effects. The design and improvement are further experimentally verified based on 0.25-μm CMOS process. An extended counting ADC based on incremental ADC with the parasitic capacitance demonstrates an INL of -4.13/+3.27 LSB, while the ADC with added symmetrical parasitic capacitance exhibits smaller spikes and lower INL of -2.14/+2.52 LSB.

IEICE Electronics ExpressVol. 23(1)
Fudan University (CN), Shanghai Fudan Microelectronics (China) (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 23%
Semiconductor materials and devices
0.73
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