Ultrafast Generative AI by Ultradense 3D Integration: A Case Study on LLM-based Edge Inference

Generative AI (GenAI) is one of the most critical applications today, continually challenging the limits of semiconductor technology. We introduce a very fine-grained 3D memory-on-logic architecture along with a novel data mapping strategy to support Large Language Model (LLM)-based GenAI, including both prefill and generation stages. Our conceptual analysis shows how ultradense 3D connectivity can enhance text generation speed and energy-efficiency well-beyond current limits. Preliminary findings from a basic analytical model indicate that the single batch autoregressive generation rate for Llama 3.2 1B could surpass 5K tokens/sec by maximizing weight locality and enhancing memory bandwidth through massively parallel 3D links between Multiply-Accumulate (MAC) units in the logic tier and their dedicated memory partitions in the 3D stack. We also explore the impact of advanced logic nodes and quantify their benefits in reducing prefill latency. Finally, we examine the challenges associated with memory access power and power density under extreme bandwidth conditions and present pipelined access strategies to address them.

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Publication Details

Journal
ACM Transactions on Design Automation of Electronic Systems
Published
2025-09-12
DOI
https://doi.org/10.1145/3768168
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
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article

Ultrafast Generative AI by Ultradense 3D Integration: A Case Study on LLM-based Edge Inference

Abhiroop Bhattacharjee, H.‐S. Philip Wong, Xiaoyu Sun, Kerem Akarvardar et al.
ACM Transactions on Design Automation of Electronic Systems
Ferroelectric and Negative Capacitance Devices
article

Ultrafast Generative AI by Ultradense 3D Integration: A Case Study on LLM-based Edge Inference

Abhiroop Bhattacharjee, H.‐S. Philip Wong, Xiaoyu Sun, Kerem Akarvardar, Xiaochen Peng, Hidehiro Fujiwara, H. Mori, Brian Crafton
article en

Abstract

Generative AI (GenAI) is one of the most critical applications today, continually challenging the limits of semiconductor technology. We introduce a very fine-grained 3D memory-on-logic architecture along with a novel data mapping strategy to support Large Language Model (LLM)-based GenAI, including both prefill and generation stages. Our conceptual analysis shows how ultradense 3D connectivity can enhance text generation speed and energy-efficiency well-beyond current limits. Preliminary findings from a basic analytical model indicate that the single batch autoregressive generation rate for Llama 3.2 1B could surpass 5K tokens/sec by maximizing weight locality and enhancing memory bandwidth through massively parallel 3D links between Multiply-Accumulate (MAC) units in the logic tier and their dedicated memory partitions in the 3D stack. We also explore the impact of advanced logic nodes and quantify their benefits in reducing prefill latency. Finally, we examine the challenges associated with memory access power and power density under extreme bandwidth conditions and present pipelined access strategies to address them.

ACM Transactions on Design Automation of Electronic SystemsVol. 31(1)
Taiwan Semiconductor Manufacturing Company (United States) (US), Taiwan Semiconductor Manufacturing Company (China) (CN), Taiwan Semiconductor Manufacturing Company (Taiwan) (TW), Stanford University (US)
Openalex Percentile: Top 74%
Ferroelectric and Negative Capacitance Devices
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