Corrigendum to “Enhanced thermoelectric properties of the topological phase of monolayer HfC”

Abstract Figure 3(d) in the paper [ Chin. Phys. B 34 057301 (2025)] contained typos in the ZT values. Figure A4 contained typo in the label. The correct figures are provided. This modification does not affect the result presented in the paper.

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Publication Details

Journal
Chinese Physics B
Published
2025-09-29
DOI
https://doi.org/10.1088/1674-1056/ae0c7b
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.00
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article

Corrigendum to “Enhanced thermoelectric properties of the topological phase of monolayer HfC”

Baojuan Dong, Huaihong Guo, Wei‐Jiang Gong, Riichiro Saito et al.
Chinese Physics B
Advanced Thermoelectric Materials and Devices
article

Corrigendum to “Enhanced thermoelectric properties of the topological phase of monolayer HfC”

Baojuan Dong, Huaihong Guo, Wei‐Jiang Gong, Riichiro Saito, Nisar Muhammad, Teng Yang, Nguyen Tuan Hung, Wenlong Mu, Zhidong Zhang
article en

Abstract

Abstract Figure 3(d) in the paper [ Chin. Phys. B 34 057301 (2025)] contained typos in the ZT values. Figure A4 contained typo in the label. The correct figures are provided. This modification does not affect the result presented in the paper.

Chinese Physics BVol. 34(10)
Tohoku University (JP), Northeastern University (CN)
Openalex Percentile: Top 80%
Advanced Thermoelectric Materials and Devices
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