Design and Simulation of III‐Nitride‐Based Polarization‐Matched Resonant‐Tunneling Diodes with Quaternary AlGaInN Quantum Wells and Ternary AlInN Double Barriers

This article proposes novel III‐nitride‐based resonant‐tunneling diodes (RTDs) with polarization‐matched (PM) nano‐heterostructures consisting of quaternary AlGaInN quantum wells (QWs) and ternary AlInN double barriers (DBs). The feature of this concept is the capability of the wide‐range energy‐band engineering. According to the concept of PM‐RTDs, numerical analyses are performed to determine the optimum alloy compositions for AlGaInN‐QW/AlInN‐DB nano‐heterostructures and are then subjected to device simulations. The results confirm that the PM‐RTD structures effectively suppress the formation of polarization‐induced built‐in electric fields and thereby exhibit higher output current densities. The more detailed simulations reveal that the PM‐RTDs with quaternary AlGaInN QWs exhibit superior performance by breaking the trade‐off between the peak‐to‐valley current ratios and the peak current density for PM‐RTDs with binary GaN QWs.