Effect of Substrate Temperature on the Growth of InAs/Graphene Films

The present study explores the effect of substrate temperature on the growth of InAs/graphene films grown via molecular beam epitaxy. Increasing substrate temperature leads to thicker film deposition, attributed to changes in thermal accommodation, sticking coefficient, adsorption–desorption dynamics of adatoms, and surface kinetics. This is facilitated by the increased diffusion length of adatoms at higher temperatures, allowing for larger coverage areas before nucleation and island formation occur. While roughness scaling exponents remain consistent at 330 and 360 °C, a significant deviation is observed at 400 °C, indicating a departure from expected power‐law behavior in the height–height correlation function. Additionally, the interface width expands with rising temperature, while the lateral correlation length remains relatively stable. These findings provide insights into optimizing the thin film growth for indium arsenide (InAs) onto graphene, emphasizing the intricate relationship between temperature, growth mechanisms, and surface properties. Understanding these dynamics is essential for leveraging the unique properties of InAs/graphene in future device applications.