Modified Green–Naghdi models for photothermoelastic waves in a semiconductor material containing cylindrical cavity

This study presents a new approach for examining photo-thermoelastic interactions in a semiconductor material with cylindrical cavity by applying the fully coupled Green–Naghdi type III thermoelastic model. The analysis considers the impact of a surface heat flux that decays exponentially over time. The cubic finite element approach is employed to numerically solve the governing equations, offering higher accuracy in capturing the field variations over each element compared to linear or quadratic formulations. A numerical example based on a simplified geometry is provided to demonstrate the model’s effectiveness. The computed results are illustrated graphically to highlight variations in carrier concentration, temperature, mechanical displacement, stress, and electrochemical potential. The outcomes are analyzed and interpreted to gain deeper insight into the system’s response under the given thermal excitation.