Halide Perovskite Memristor Crossbar Arrays for Low Voltage in Memory Computing

Abstract Halide‐perovskite memristors have progressed from initial single‐junction cells to centimeter‐scale crossbar arrays that are suitable for integration with CMOS back‐end systems. While ion‐soft frameworks enable sub‐picojoule multilayer resistance tuning, they remain vulnerable to moisture intrusion and vacancy drift. This study connects lattice distortion, defect‐creation enthalpy, and ion‐migration thresholds to composition, dimensionality, and interfacial engineering. The implementation of targeted compositional heterostructures effectively reduces ion hopping during high‐temperature operation, leading to a substantial decrease in leakage currents. The introductory section examines the structural and functional basis, covering phase equilibria, band‐gap tunability, and crystal chemistry guided by tolerance factors. The final perspective discusses phase conversions caused by humidity, random filament failures, and thermal limitations while suggesting the implementation of circuit‐aware material screening alongside in situ diagnostics to enhance the reliability and energy efficiency of data‐driven neuromorphic computing systems.