Enabling highly conductive charged oxide inversion layers through hot corona discharge

Silicon solar cell manufacturing is dominated by cell architectures that rely on a high-temperature energy-intensive diffusion process to introduce dopants. Such doped layers lead to substantial Auger recombination losses. Charged oxide inversion layer (COIL) solar cells eliminate the need for high-temperature diffusion and highly doped surface layers by incorporating charge in a surface dielectric to form an inversion layer emitter beneath the semiconductor-dielectric interface. The success of the COIL design hinges on achieving a sufficiently high dielectric charge to produce highly conductive inversion-layer emitters. In this work, we develop a new “hot-corona discharge” technique to facilitate the charge drive-in via a process integrating corona charging and thermal annealing into a single step. We show the process is effective in creating an n- type inversion layer on p -type silicon wafers, yielding increases in carrier lifetime and reductions in emitter sheet resistance. The temperature (330–430 ° C) and time (30–1020 s) dependence of this new hot-corona approach is studied, demonstrating careful control over charge density. By optimising the process against temperature and ion drive-in cycles, we achieve the highest positive charge concentration reported on a SiO 2 /Si interface of >4.0 × 10 13 q/cm 2 . With the ability to incorporate such high charge density, a low sheet resistance and highly conductive inversion layer can be formed. This represents a significant step forward in the attempt to replace the diffused emitter technology with a low-temperature alternative, enabling high-efficiency inversion-layer solar cells with reduced thermal budget and intrinsic losses. • A “hot-corona” method was developed to incorporate charge into SiO 2 layer to form an inversion layer. • The highest positive charge concentration at SiO 2 /Si interface of >4.0 × 10 13 q/cm 2 was reported. • The temperature and time dependence of the hot-corona approach was demonstrated. • A simulated solar cell efficiency exceeding 24 % was achieved based on COIL method.

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Publication Details

Journal
Solar Energy Materials and Solar Cells
Published
2025-09-27
DOI
https://doi.org/10.1016/j.solmat.2025.113930
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Enabling highly conductive charged oxide inversion layers through hot corona discharge

Peter R. Wilshaw, Anastasia Soeriyadi, Edris Khorani, Ruy S. Bonilla et al.
Solar Energy Materials and Solar Cells
Semiconductor materials and devices
article

Enabling highly conductive charged oxide inversion layers through hot corona discharge

Peter R. Wilshaw, Anastasia Soeriyadi, Edris Khorani, Ruy S. Bonilla, John D. Murphy, J. Z. Chen, Tarek O. Abdul Fattah, Matthew Wright
article en

Abstract

Silicon solar cell manufacturing is dominated by cell architectures that rely on a high-temperature energy-intensive diffusion process to introduce dopants. Such doped layers lead to substantial Auger recombination losses. Charged oxide inversion layer (COIL) solar cells eliminate the need for high-temperature diffusion and highly doped surface layers by incorporating charge in a surface dielectric to form an inversion layer emitter beneath the semiconductor-dielectric interface. The success of the COIL design hinges on achieving a sufficiently high dielectric charge to produce highly conductive inversion-layer emitters. In this work, we develop a new “hot-corona discharge” technique to facilitate the charge drive-in via a process integrating corona charging and thermal annealing into a single step. We show the process is effective in creating an n- type inversion layer on p -type silicon wafers, yielding increases in carrier lifetime and reductions in emitter sheet resistance. The temperature (330–430 ° C) and time (30–1020 s) dependence of this new hot-corona approach is studied, demonstrating careful control over charge density. By optimising the process against temperature and ion drive-in cycles, we achieve the highest positive charge concentration reported on a SiO 2 /Si interface of >4.0 × 10 13 q/cm 2 . With the ability to incorporate such high charge density, a low sheet resistance and highly conductive inversion layer can be formed. This represents a significant step forward in the attempt to replace the diffused emitter technology with a low-temperature alternative, enabling high-efficiency inversion-layer solar cells with reduced thermal budget and intrinsic losses. • A “hot-corona” method was developed to incorporate charge into SiO 2 layer to form an inversion layer. • The highest positive charge concentration at SiO 2 /Si interface of >4.0 × 10 13 q/cm 2 was reported. • The temperature and time dependence of the hot-corona approach was demonstrated. • A simulated solar cell efficiency exceeding 24 % was achieved based on COIL method.

Solar Energy Materials and Solar CellsVol. 295
University of Warwick (GB), University of Oxford (GB)
Government of the United Kingdom, UK Research and Innovation, Leverhulme Trust, Royal Academy of Engineering, University of Warwick, University of Oxford, HORIZON EUROPE Framework Programme, Engineering and Physical Sciences Research Council
Openalex Percentile: Top 74%
Semiconductor materials and devices
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