Low losses optical devices on GaP/GaAs platform
Here we study Gallium Phosphide-based devices made from GaP/GaAs epilayers in the framework of non-linear photonic integration. We demonstrate state-of-the art propagation losses in the near infrared and discuss this value in terms of roughness and crystal defects.
Authors
- Konstantinos Pantzas (ORCID: https://orcid.org/0000-0002-2297-3247)
- I. Sagnes (ORCID: https://orcid.org/0000-0001-8068-6599)
- Charles Cornet (ORCID: https://orcid.org/0000-0002-1363-7401)
- Rozenn Bernard (ORCID: https://orcid.org/0000-0001-9312-5037)
- Lise Morice
- A Lemoine
Institutions
- Centre National de la Recherche Scientifique (FR)
- Université Paris-Saclay (FR)
- Institut des Nanotechnologies de Lyon (FR)
- Institut National des Sciences Appliquées de Rennes (FR)
- Centre de Nanosciences et de Nanotechnologies (FR)
- Institut de Physique de Rennes (FR)
- Université de Rennes (FR)
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/iprsn.2025.iw3a.4
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00