Low losses optical devices on GaP/GaAs platform

Here we study Gallium Phosphide-based devices made from GaP/GaAs epilayers in the framework of non-linear photonic integration. We demonstrate state-of-the art propagation losses in the near infrared and discuss this value in terms of roughness and crystal defects.

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Publication Details

Published
2025-01-01
DOI
https://doi.org/10.1364/iprsn.2025.iw3a.4
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
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article

Low losses optical devices on GaP/GaAs platform

Konstantinos Pantzas, I. Sagnes, Charles Cornet, Rozenn Bernard et al.
Semiconductor Lasers and Optical Devices
article

Low losses optical devices on GaP/GaAs platform

Konstantinos Pantzas, I. Sagnes, Charles Cornet, Rozenn Bernard, Lise Morice, A Lemoine
article en

Abstract

Here we study Gallium Phosphide-based devices made from GaP/GaAs epilayers in the framework of non-linear photonic integration. We demonstrate state-of-the art propagation losses in the near infrared and discuss this value in terms of roughness and crystal defects.

Centre National de la Recherche Scientifique (FR), Université Paris-Saclay (FR), Institut des Nanotechnologies de Lyon (FR), Institut National des Sciences Appliquées de Rennes (FR), Centre de Nanosciences et de Nanotechnologies (FR), Institut de Physique de Rennes (FR), Université de Rennes (FR)
Openalex Percentile: Top 74%
Semiconductor Lasers and Optical Devices
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Low losses optical devices on GaP/GaAs platform — Konstantinos Pantzas, I. Sagnes, et al. · (2025) | TGRS Research Map | TGRS