Exploring Resistive Switching in Novel Amorphous Phosphate Glasses for Next‐Generation Memory Applications

The potential application of phosphate semiconductor glass in the interlayer of resistive random access memory (RRAM) is investigated. Glasses based on (50–x)% V 2 O 5 −50% P 2 O 5 are synthesized, which are doped with x% MO (where MO = ZnO, CaO, or Na 2 O). X‐ray diffraction analysis reveals that the ZnO and CaO series are amorphous, while the Na 2 O series is crystalline. Differential scanning calorimetry analysis reveals that the glass transition temperature ( T g ) is around 200 °C. X‐ray photoelectron spectroscopy analysis reveals that the internal V elements are primarily +4 and +5. Initial electrical measurements indicate that the ZnO series glass exhibits semiconductor electrical properties. Additionally, nanodevices are fabricated and measured to demonstrate the resistive switching characteristics, with conduction mechanisms such as trap‐assisted tunneling, space‐charge limiting current, or Ohmic conduction. This study demonstrates the potential of phosphate semiconductor glass for application in RRAM and paves the way for the future development of all‐glass RRAM components.