The Electronic Structure of Zirconium and Hafnium Monochalcogenides

High-level <i>ab initio</i> CCSD(T) and spin-orbit icMRCI+Q calculations were used to predict potential energy curves (PECs) for the lowest-lying states of ZrO, ZrS, HfO, and HfS. The prediction of the ground state is basis set dependent at the icMRCI+Q level for ZrO and ZrS due to the small singlet-triplet splitting between the lowest <sup>1</sup>Σ<sup>+</sup> and <sup>3</sup>Δ states. CCSD(T) with a spin orbit correction predicted the <sup>1</sup>Σ<sup>+</sup> ground state in agreement with experiment. New all-electron basis sets were developed for Hf to improve the results over those predicted by use of effective core potentials (ECPs) that subsume the 4f electrons into the definition of the core. The use of the new DK-4f basis sets rather than ECPs became more important for HfO and HfS where there is a lack of a good core-valence separation. icMRCI+Q, CCSD(T), and DFT calculations for the spectroscopic parameters of ZrO, ZrS, HfO, and HfS were benchmarked with available experimental data. Bond dissociation energies (BDEs) of these four systems were calculated at the Feller-Peterson-Dixon (FPD) level to be 762.1 (ZrO), 543.5 (ZrS), 803.8 (HfO), and 575.1 kJ/mol (HfS), in excellent agreement with experiment. The HfS BDE was remeasured using the R3PI method, providing an updated experimental measurement of <i>D</i><sub>0</sub>(HfS) = 5.978 ± 0.002 eV = 576.8 ± 0.2 kJ/mol. This experimental value, combined with experimental measurements of the ionization energies of Hf and HfS, gives the cationic BDE of <i>D</i><sub>0</sub>(Hf<sup>+</sup>-S) = 5.124 ± 0.002 eV = 494.4 ± 0.2 kJ/mol.

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Publication Details

Journal
The Journal of Physical Chemistry A
Published
2025-09-25
DOI
https://doi.org/10.1021/acs.jpca.5c05402
Primary Topic
Inorganic Chemistry and Materials
Type
article
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article

The Electronic Structure of Zirconium and Hafnium Monochalcogenides

João Gabriel Farias Romeu, Kirk A. Peterson, Michael D. Morse, Edward D. Kaye et al.
The Journal of Physical Chemistry A
Inorganic Chemistry and Materials
article

The Electronic Structure of Zirconium and Hafnium Monochalcogenides

João Gabriel Farias Romeu, Kirk A. Peterson, Michael D. Morse, Edward D. Kaye, David A. Dixon, Thomas T. Kawagoe, Nickolas A. Joyner, Samantha L. Stinson
article en

Abstract

High-level <i>ab initio</i> CCSD(T) and spin-orbit icMRCI+Q calculations were used to predict potential energy curves (PECs) for the lowest-lying states of ZrO, ZrS, HfO, and HfS. The prediction of the ground state is basis set dependent at the icMRCI+Q level for ZrO and ZrS due to the small singlet-triplet splitting between the lowest <sup>1</sup>Σ<sup>+</sup> and <sup>3</sup>Δ states. CCSD(T) with a spin orbit correction predicted the <sup>1</sup>Σ<sup>+</sup> ground state in agreement with experiment. New all-electron basis sets were developed for Hf to improve the results over those predicted by use of effective core potentials (ECPs) that subsume the 4f electrons into the definition of the core. The use of the new DK-4f basis sets rather than ECPs became more important for HfO and HfS where there is a lack of a good core-valence separation. icMRCI+Q, CCSD(T), and DFT calculations for the spectroscopic parameters of ZrO, ZrS, HfO, and HfS were benchmarked with available experimental data. Bond dissociation energies (BDEs) of these four systems were calculated at the Feller-Peterson-Dixon (FPD) level to be 762.1 (ZrO), 543.5 (ZrS), 803.8 (HfO), and 575.1 kJ/mol (HfS), in excellent agreement with experiment. The HfS BDE was remeasured using the R3PI method, providing an updated experimental measurement of <i>D</i><sub>0</sub>(HfS) = 5.978 ± 0.002 eV = 576.8 ± 0.2 kJ/mol. This experimental value, combined with experimental measurements of the ionization energies of Hf and HfS, gives the cationic BDE of <i>D</i><sub>0</sub>(Hf<sup>+</sup>-S) = 5.124 ± 0.002 eV = 494.4 ± 0.2 kJ/mol.

The Journal of Physical Chemistry AVol. 129(40)
University of Alabama (US), University of Utah (US), Washington State University (US)
Openalex Percentile: Top 78%
Inorganic Chemistry and Materials
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