Ferroelectric Control of Interlayer Excitons Enables Nonvolatile Quantum Photonic Memory in Two-Dimensional Heterostructures
Interlayer excitons in van der Waals heterostructures of monolayer transition metal dichalcogenides possess long lifetimes and pronounced out-of-plane dipole moments, offering a promising platform for nonvolatile quantum photonic memory and reconfigurable valleytronic logic. However, conventional tuning approaches─such as electrostatic gating, strain engineering, and chemical doping─are typically volatile, weakly tunable, or nonretentive, limiting the realization of reliable exciton-based information storage. Here, we demonstrate robust, nonvolatile control of interlayer excitons in MoSe<sub>2</sub>/WSe<sub>2</sub>/CuInP<sub>2</sub>S<sub>6</sub> (CIPS) heterostructures via ferroelectric modulation. The bistable polarization states of the CIPS layer, arising from reversible Cu<sup>+</sup> ion displacement under external bias, induce persistent <i>in situ P</i>-type and <i>N</i>-type doping at the MoSe<sub>2</sub>/WSe<sub>2</sub> interface. This built-in polarization field enables deterministic modulation of exciton energy, photoluminescence intensity, line width, and valley polarization─all retained under high magnetic field conditions. Leveraging this mechanism, we realize a reprogrammable excitonic memory element with optically addressable binary logic states. Our findings establish ferroelectric control as a scalable and nonvolatile strategy for excitonic device engineering, opening avenues for electrically programmable quantum optoelectronic systems based on two-dimensional materials.
Authors
- Yanping Liu (ORCID: https://orcid.org/0000-0003-2990-3783)
- Zongwen Liu (ORCID: https://orcid.org/0000-0002-6434-1643)
- Shikun Hou (ORCID: https://orcid.org/0000-0003-0139-9730)
- Junying Chen (ORCID: https://orcid.org/0000-0002-5614-9731)
- Xian Zhang (ORCID: https://orcid.org/0000-0003-4079-9470)
- Jian-Tao Wang (ORCID: https://orcid.org/0000-0002-0786-1212)
- Shaofei Li (ORCID: https://orcid.org/0000-0003-4390-5777)
- Jun He (ORCID: https://orcid.org/0000-0002-8127-6740)
- Xing Xie (ORCID: https://orcid.org/0009-0001-5911-2301)
Institutions
- The University of Sydney (AU)
- Central South University (CN)
- Chinese Academy of Sciences (CN)
- City University of Hong Kong, Shenzhen Research Institute (CN)
- Songshan Lake Materials Laboratory (CN)
- FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ)
- Institute of Physics (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- ACS Nano
- Published
- 2025-09-26
- DOI
- https://doi.org/10.1021/acsnano.5c11442
- Citations
- 3
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 1.55