MoS₂-Based NC-TMDTFET for Drain Voltage and Temperature Variability Analysis

The ongoing quest for low-power and high-efficiency electronic components has fueled interest in innovative transistor designs that offer superior gate control and performance. This work introduces a novel MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-based Negative Capacitance Tunnel Field-Effect Transistor (NC-TMDTFET), integrating a three-layer MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> channel with a silicon - doped hafnium oxide (Si:HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>) ferroelectric material. The multilayer MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> configuration enhances charge transport while minimizing short-channel effects, whereas the Si:HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> layer contributes to improved electrostatic coupling through its negative capacitance properties. The device’s behavior under various drain voltages and temperature conditions is examined using Sentaurus TCAD simulations. Simulation results reveal an I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> = 2.1 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">–4</sup> A/μm and an I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf> = 5.7 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">–10</sup> A/μm, achieving a high ON/OFF ratio of ~10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup>. Moreover, the subthreshold swing (SS) = 39 mV/ decade, outperforming conventional MOSFET limits. These findings confirm the proposed structure’s robustness against voltage and thermal variations, establishing its potential in low-power applications.