Investigation of Analog Performance of Fin-Shaped AlGaN/GaN MOSHEMTs

We investigate the analog performance of Fin-shaped AlGaN/GaN MOSHEMTs and compare key analog parameters with those of conventional AlGaN/GaN MOSHEMTs, both having a channel length of 1 μm and a channel width of 80 nm. Using well-calibrated TCAD device simulator validated against experimental data with 100nm fin width and having a channel length of 2 μm. The proposed Fin-shaped AlGaN/GaN MOSHEMT exhibits notable enhancements in analog performance metrics, including a 50% increase in transconductance and a significant improvement in intrinsic voltage gain, compared to its conventional counterpart.