Elastic Constants of <i>β</i> -(Al <sub> <i>x</i> </sub> Ga <sub> 1 <i>−x</i> </sub> ) <sub>2</sub> O <sub>3</sub> for Heterogeneous Interface Applications

The elastic and piezoelectric properties of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">β</i>-(Al<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub>Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1−x</sub>)<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>, with compositions ranging from x = 0.125 to 0.25 were analyzed using first principles calculations. The controllable bandgap by Al concentration make it a promising gate dielectric material for Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>-based high electron mobility transistors (HEMTs). The computed 13 monoclinic elastic constants reveal composition-dependent trends in mechanical and electrical behavior, underscoring the influence of aluminum concentration on structural stability. Composition-dependent trends in the 13 monoclinic elastic constants are presented from first-principles for <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">${\rm{x\ = \ 0}} - {0}{\rm{.25}}$</tex-math></inline-formula>, without prescribing a specific analytic form; these trends inform the design of strain-engineered materials for advanced semiconductor applications. These findings provide valuable insights into <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">β</i>-(Al<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub>Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1−x</sub>)<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> and pave the way for improved performance in next-generation Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> HEMTs.

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Publication Details

Journal
IEEE Nanotechnology Magazine
Published
2025-09-26
DOI
https://doi.org/10.1109/mnano.2025.3607051
Primary Topic
Ga2O3 and related materials
Type
article
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article

Elastic Constants of β -(Al x Ga 1 −x ) 2 O 3 for Heterogeneous Interface Applications

Hyokyung Lim, Seok Hyun Yoon, Byoung Don Kong
IEEE Nanotechnology Magazine
Ga2O3 and related materials
article

Elastic Constants of β -(Al x Ga 1 −x ) 2 O 3 for Heterogeneous Interface Applications

Hyokyung Lim, Seok Hyun Yoon, Byoung Don Kong
article en

Abstract

The elastic and piezoelectric properties of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">β</i>-(Al<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub>Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1−x</sub>)<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>, with compositions ranging from x = 0.125 to 0.25 were analyzed using first principles calculations. The controllable bandgap by Al concentration make it a promising gate dielectric material for Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>-based high electron mobility transistors (HEMTs). The computed 13 monoclinic elastic constants reveal composition-dependent trends in mechanical and electrical behavior, underscoring the influence of aluminum concentration on structural stability. Composition-dependent trends in the 13 monoclinic elastic constants are presented from first-principles for <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">${\rm{x\ = \ 0}} - {0}{\rm{.25}}$</tex-math></inline-formula>, without prescribing a specific analytic form; these trends inform the design of strain-engineered materials for advanced semiconductor applications. These findings provide valuable insights into <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">β</i>-(Al<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub>Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1−x</sub>)<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> and pave the way for improved performance in next-generation Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> HEMTs.

IEEE Nanotechnology MagazineVol. 19(6)
Pohang University of Science and Technology (KR)
Openalex Percentile: Top 82%
Ga2O3 and related materials
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