Elastic Constants of <i>β</i> -(Al <sub> <i>x</i> </sub> Ga <sub> 1 <i>−x</i> </sub> ) <sub>2</sub> O <sub>3</sub> for Heterogeneous Interface Applications
The elastic and piezoelectric properties of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">β</i>-(Al<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub>Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1−x</sub>)<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>, with compositions ranging from x = 0.125 to 0.25 were analyzed using first principles calculations. The controllable bandgap by Al concentration make it a promising gate dielectric material for Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>-based high electron mobility transistors (HEMTs). The computed 13 monoclinic elastic constants reveal composition-dependent trends in mechanical and electrical behavior, underscoring the influence of aluminum concentration on structural stability. Composition-dependent trends in the 13 monoclinic elastic constants are presented from first-principles for <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">${\rm{x\ = \ 0}} - {0}{\rm{.25}}$</tex-math></inline-formula>, without prescribing a specific analytic form; these trends inform the design of strain-engineered materials for advanced semiconductor applications. These findings provide valuable insights into <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">β</i>-(Al<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub>Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1−x</sub>)<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> and pave the way for improved performance in next-generation Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> HEMTs.
Authors
- Hyokyung Lim
- Seok Hyun Yoon (ORCID: https://orcid.org/0000-0003-4733-7033)
- Byoung Don Kong (ORCID: https://orcid.org/0000-0003-4072-4399)
Institutions
- Pohang University of Science and Technology (KR)
Publication Details
- Journal
- IEEE Nanotechnology Magazine
- Published
- 2025-09-26
- DOI
- https://doi.org/10.1109/mnano.2025.3607051
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00