Synthesis and Characterization of (Sn, Al) Co-doped ZnO Semiconductors

This study presents the effects of tin and aluminium doping and tin/aluminium co-doping on structural, optical, morphological properties of ZnO. Solid state reaction method was used to prepare the samples Zn1-x-ySnxAlyO ((x:y) = (0.00: 0.00), (0.00: 0.03), (0.03: 0.00), (0.03: 0.03)). The properties of the samples were examined by XRD, SEM, EDX spectroscopy and UV–vis spectroscopy. XRD results demonstrated that the lattice parameters a and c, unit cell volume, bond length L decreases while dislocation density increases with doping. The average crystallite size decreased compared to undoped ZnO. SEM images indicated that all samples show presence of hexagonal like grains and grain size decreases with doping. The optical band gaps were estimated from Tauc plots and found as 3.27, 3.26, 3.23, 3.25 eV for undoped and doped Zn0.97Sn0.03O, Zn0.97Al0.03O and Zn0.94Sn0.03Al0.03O samples, respectively. The structural and optical calculations showed that characteristic properties of ZnO changed with Al and Sn doping.