Characterization of two-step photon absorption current in ZnTeO-based intermediate band solar cell

Abstract Two-step photon absorption (TSPA) currents in ZnTeO-based intermediate band solar cell (IBSC) have been investigated experimentally in detail using a red and an infrared laser with wavelengths of 662 nm and 1306 nm as the excitation lights from VB to IB (VB→IB) and from IB to CB (IB→CB), respectively. From the red laser irradiation density dependence of photocurrent, the existence of two current paths is demonstrated. Temperature dependences of photocurrent and TSPA current have revealed the increase of TSPA at <50 K and 100–150 K due to the decrease of direct escape current through the blocking layer and increased electron concentration in IB by Cl donor activation, respectively. This study demonstrates experimentally the importance of the suppression of direct escape of electrons from IB for further improvement.

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Publication Details

Journal
Japanese Journal of Applied Physics
Published
2025-09-25
DOI
https://doi.org/10.35848/1347-4065/ae0bd7
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Characterization of two-step photon absorption current in ZnTeO-based intermediate band solar cell

Tooru Tanaka, Katsuhiko Saito, Qixin GUO, Yuta Suetugu
Japanese Journal of Applied Physics
Chalcogenide Semiconductor Thin Films
article

Characterization of two-step photon absorption current in ZnTeO-based intermediate band solar cell

Tooru Tanaka, Katsuhiko Saito, Qixin GUO, Yuta Suetugu
article en

Abstract

Abstract Two-step photon absorption (TSPA) currents in ZnTeO-based intermediate band solar cell (IBSC) have been investigated experimentally in detail using a red and an infrared laser with wavelengths of 662 nm and 1306 nm as the excitation lights from VB to IB (VB→IB) and from IB to CB (IB→CB), respectively. From the red laser irradiation density dependence of photocurrent, the existence of two current paths is demonstrated. Temperature dependences of photocurrent and TSPA current have revealed the increase of TSPA at <50 K and 100–150 K due to the decrease of direct escape current through the blocking layer and increased electron concentration in IB by Cl donor activation, respectively. This study demonstrates experimentally the importance of the suppression of direct escape of electrons from IB for further improvement.

Japanese Journal of Applied PhysicsVol. 64(10)
Saga University (JP)
Openalex Percentile: Top 74%
Chalcogenide Semiconductor Thin Films
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