Integrated High-Voltage Bidirectional Protection Switches with Overcurrent Protection: Review and Design Guide

Protecting sensitive electronic interfaces is critical in industrial applications, where exposure to harsh conditions and fault events is common. This paper reviews and compares circuit techniques for the design of bidirectional protection switches, highlighting key features such as analog switching, high-voltage capability, thermal shutdown, galvanic input isolation, and adjustable current limiting. Based on this review, we propose a universal architecture that combines the most suitable building blocks identified in the literature, with a focus on options that would enable monolithic integration in high-voltage silicon-on-insulator (SOI) technology and capable of delivering up to 2 A at a maximum voltage of 200 V. The proposed architecture is intended as a design guide for realizing a universal switch, rather than a fabricated implementation. To demonstrate system-level interactions, behavioral MATLAB/Simulink (R2024b) simulations are presented using generic components, which show expected functional responses but are not tied to process-specific device models.

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Publication Details

Journal
Electronics
Published
2025-09-26
DOI
https://doi.org/10.3390/electronics14193819
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
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article

Integrated High-Voltage Bidirectional Protection Switches with Overcurrent Protection: Review and Design Guide

Mostafa Amer, Yvon Savaria, Ahmad Hassan, Justin Pabot
Electronics
Silicon Carbide Semiconductor Technologies
article

Integrated High-Voltage Bidirectional Protection Switches with Overcurrent Protection: Review and Design Guide

Mostafa Amer, Yvon Savaria, Ahmad Hassan, Justin Pabot
article en

Abstract

Protecting sensitive electronic interfaces is critical in industrial applications, where exposure to harsh conditions and fault events is common. This paper reviews and compares circuit techniques for the design of bidirectional protection switches, highlighting key features such as analog switching, high-voltage capability, thermal shutdown, galvanic input isolation, and adjustable current limiting. Based on this review, we propose a universal architecture that combines the most suitable building blocks identified in the literature, with a focus on options that would enable monolithic integration in high-voltage silicon-on-insulator (SOI) technology and capable of delivering up to 2 A at a maximum voltage of 200 V. The proposed architecture is intended as a design guide for realizing a universal switch, rather than a fabricated implementation. To demonstrate system-level interactions, behavioral MATLAB/Simulink (R2024b) simulations are presented using generic components, which show expected functional responses but are not tied to process-specific device models.

ElectronicsVol. 14(19)
Polytechnique Montréal (CA)
Openalex Percentile: Top 74%
Silicon Carbide Semiconductor Technologies
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Integrated High-Voltage Bidirectional Protection Switches with Overcurrent Protection: Review and Design Guide — Mostafa Amer, Yvon Savaria, et al. · Electronics (2025) | TGRS Research Map | TGRS