1.5-kV blocking vertical AgO<i> <sub>x</sub> </i>/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes with ultralow leakage current and over 10<sup>13</sup> rectification ratio
Abstract High-performance vertical AgO x / β -Ga 2 O 3 Schottky barrier diodes (SBDs) were demonstrated in this work. Ag 2 O was confirmed as the primary phase in the AgO x films deposited by RF magnetron sputtering at room temperature, using the x-ray photoelectron spectroscopy and x-ray diffraction. The built-in voltage ( V bi ) was determined to be 2.3 V, corresponding to a Schottky barrier height of 2.41 eV at the AgO x / β -Ga 2 O 3 interface. The vertical AgO x / β -Ga 2 O 3 SBDs achieved an ultralow leakage current of <10 −11 A cm −2 with a rectification ratio over 10 13 and a low differential specific on -resistance ( R ON,sp ) of 5 mΩ cm 2 . A high reverse breakdown voltage ( V br ) of 1.5 kV was obtained, resulting in a decent power figure of merit ( V br 2 / R ON,sp ) of 0.46 GW cm −2 . These results highlight a promising pathway for developing high-performance β- Ga 2 O 3 -based power diodes.
Authors
- Bochang Li (ORCID: https://orcid.org/0000-0002-8195-6842)
- Zheyuan Hu (ORCID: https://orcid.org/0009-0001-0291-6157)
- Cizhe Fang (ORCID: https://orcid.org/0009-0005-9466-0919)
- Genquan Han (ORCID: https://orcid.org/0000-0001-5140-4150)
- Xiaole Jia
- Haodong Hu (ORCID: https://orcid.org/0009-0002-8915-7225)
- Yibo Wang (ORCID: https://orcid.org/0000-0002-4058-1319)
- Hongrui Zhang (ORCID: https://orcid.org/0000-0003-1782-5976)
- Yan Liu (ORCID: https://orcid.org/0000-0003-4580-8831)
- Yue Hao (ORCID: https://orcid.org/0000-0002-8081-2919)
Institutions
- Xidian University (CN)
- Suzhou Institute of Nano-tech and Nano-bionics (CN)
- Zhejiang University of Technology (CN)
Publication Details
- Journal
- Journal of Physics D Applied Physics
- Published
- 2025-09-26
- DOI
- https://doi.org/10.1088/1361-6463/ae0b82
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00