Selective-Area Growth of Large-Area Wurtzite InP Nanofin Arrays: Implications for Solid-State Lighting

We characterized the selective-area growth of wurtzite (WZ) InP nanofin structures toward the large-area growth of crystal phase transition materials. Two different mask opening shapes were used to characterize the growth behavior and crystal growth of the InP nanofins. The InP nanofins were successfully grown on an InP(111)A substrate with different opening designs. Each average nanofin height corresponded to a distinct saturation value. The saturated height of the fins depended on the adatom diffusion length on the side facets of the nanofins. Beyond the height saturation point, the fin width increased, and the fins coalesced with one another . Then, InP planar structure films, with the top layer in a zincblende (ZB) phase, were formed on the masked substrate. The growth behavior and mechanism of the WZ InP fins were applied to epitaxial lateral overgrowth (ELO) using a two-step growth process, and the WZ InP film, scaled to several tens of micrometers, was successfully formed.