Development of Water-Developable Negative Photoresist for i-Line Photolithography Using Cellulose Derivatives with Underlayer

Water-developable photoresist was synthesized by introducing methacrylate groups into hydroxypropyl cellulose (HPC), a cellulose derivative, via substitution of hydroxyl groups. The material enabled micropatterning through ultraviolet (UV) exposure at a wavelength of 365 nm with an exposure dose of 450 mJ/cm2. Line and dot micropatterns were formed on polypropylene substrates applying underlayer, achieving resolutions of 4.5 µm and 5.0 µm, respectively. The photoresist demonstrated superior etching resistance under CF4 plasma compared to another water-soluble photo resist. Unlike conventional photoresists that require hazardous organic solvents, this water-developable photoresist offers an environmentally friendly alternative, reducing health risks and environmental impact in the electronics industry.

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Publication Details

Journal
Electronic Materials
Published
2025-09-25
DOI
https://doi.org/10.3390/electronicmat6040013
Citations
1
Primary Topic
Electrowetting and Microfluidic Technologies
Type
article
Field-Weighted Citation Impact
0.73

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article

Development of Water-Developable Negative Photoresist for i-Line Photolithography Using Cellulose Derivatives with Underlayer

Mayu Morita, Satoshi Takei, Mariana Mari Oshima, Yuna Hachikubo et al.
1 citations
Electronic Materials
Electrowetting and Microfluidic Technologies
0.73
article

Development of Water-Developable Negative Photoresist for i-Line Photolithography Using Cellulose Derivatives with Underlayer

Mayu Morita, Satoshi Takei, Mariana Mari Oshima, Yuna Hachikubo, H. Hayashi, Mano Ando
article en
1 citations

Abstract

Water-developable photoresist was synthesized by introducing methacrylate groups into hydroxypropyl cellulose (HPC), a cellulose derivative, via substitution of hydroxyl groups. The material enabled micropatterning through ultraviolet (UV) exposure at a wavelength of 365 nm with an exposure dose of 450 mJ/cm2. Line and dot micropatterns were formed on polypropylene substrates applying underlayer, achieving resolutions of 4.5 µm and 5.0 µm, respectively. The photoresist demonstrated superior etching resistance under CF4 plasma compared to another water-soluble photo resist. Unlike conventional photoresists that require hazardous organic solvents, this water-developable photoresist offers an environmentally friendly alternative, reducing health risks and environmental impact in the electronics industry.

Electronic MaterialsVol. 6(4)
Toyama Prefectural University (JP)
TOBE MAKI Scholarship Foundation, Japan Society for the Promotion of Science
Openalex Percentile: Top 23%
Electrowetting and Microfluidic Technologies
0.73
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Development of Water-Developable Negative Photoresist for i-Line Photolithography Using Cellulose Derivatives with Underlayer — Mayu Morita, Satoshi Takei, et al. · Electronic Materials (2025) | TGRS Research Map | TGRS