Characterization and Optimization of Si-FinFET Structure Based on Gate Length and Working Temperature

This research explores the potential of utilizing Fin Field Effect Transistors (FinFETs) as nano-scale temperature sensors, with a focus on their temperature sensitivity.The thermal characteristics of FinFETs were rigorously analyzed using the Multi-gate Field Effect Transistor (MuGFET) simulation engine.Temperature sensitivity was evaluated by examining the mode coupling of the metal-oxidesemiconductor (MOS) diode during simulations of current-voltage (I-V) behavior across varying gate lengths (Lg = 7, 10, and 20 nm) and temperature ranges.The maximum temperature sensitivity of the FinFET is determined by identifying the largest I within the operating voltage range of 0-1 V (VDD).Notably, the temperature sensitivity of FinFETs increases proportionally with channel length, within the 7 to 20 nm range.Based on the results, the optimal channel length for maximizing temperature sensitivity under the specified conditions is 10 nm.These findings offer valuable insights into the design parameters of FinFETs for enhanced thermal responsiveness.