Effect of threshold voltage variability on uniformity in FET-based terahertz focal-plane arrays
Abstract In a large-scale terahertz focal-plane array (FPA) based on field-effect transistors, pixel-to-pixel threshold voltage ( V TH ) variability can introduce response non-uniformity, definatelly degrading imaging quality. To experimentally address this issue, we designed and fabricated a 32 × 32 pixel, 400 μm pitch, 340 GHz, and room-temperature FPA based on AlGaN/GaN high-electron-mobility transistors. By sweeping the gate–source voltage and employing a signal-to-noise ratio method, we determined the optimal gate–source voltage ( V OP ) for each pixel. When each pixel operates at its V OP , both the uniformity and sensitivity of the FPA can be effectively enhanced.
Authors
- Jian Chen (ORCID: https://orcid.org/0000-0002-1360-8969)
- Jinfeng Zhang (ORCID: https://orcid.org/0000-0003-1267-8997)
- Congjing Hao (ORCID: https://orcid.org/0000-0002-0342-3362)
- Yang Shangguan
- Defeng Liu
- Xinxing Li (ORCID: https://orcid.org/0000-0002-4773-1615)
- Lin Jin (ORCID: https://orcid.org/0000-0001-7135-6635)
- Hua Qin (ORCID: https://orcid.org/0000-0003-4885-0963)
- Jiandong Sun (ORCID: https://orcid.org/0009-0000-1853-595X)
- Mao Wang (ORCID: https://orcid.org/0000-0001-9322-334X)
Institutions
- Chinese Academy of Sciences (CN)
- Suzhou Institute of Nano-tech and Nano-bionics (CN)
- AviChina Industry & Technology (China) (CN)
- Nanjing University (CN)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2025-09-25
- DOI
- https://doi.org/10.35848/1882-0786/ae0b44
- Citations
- 1
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.73