Process Temperature Control for Low Dishing in CMP

Growing demand for high-performance system semiconductors has highlighted the importance of hybrid bonding, where precise control of copper dishing is essential. This requirement reinforces the role of chemical mechanical planarization (CMP). Many studies have sought to control dishing by modifying slurry chemistry or adjusting mechanical parameters, but these approaches have not been sufficient. This study addresses the overlooked effect of process temperature and demonstrates its role in integrating both chemical and mechanical behaviors in CMP. Removal rates of Cu, Ta, and SiO₂ films were evaluated through blanket wafer experiments, and all exhibited Arrhenius-type behavior as a function of temperature and activation energy. The results showed that maintaining the process temperature at 30 °C balanced selectivity and minimized dishing on patterned wafers. To enable precise temperature control, a vortex-tube-based pad cooling system was developed. Without temperature control, dishing increased by 12 nm in the 100 µm pattern and 16 nm in the 50 µm pattern. With temperature control, dishing was reduced to 4 nm and below 1 nm, respectively. These results demonstrate that process temperature is a key parameter for controlling selectivity and ensuring precise dishing control, which is critical to meeting the requirements of hybrid bonding.